68725人已查看 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 期刊2024最新IF预测值
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2024年02月发布的2024版
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2023年01月发布的2023版
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2021年12月发布的2021版
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2020年12月发布的2020版
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综述期刊
2023年12月最新升级版
工程技术2区
PHYSICS, APPLIED
物理:应用
2区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
3区
否
否
2022年12月升级版
工程技术2区
PHYSICS, APPLIED
物理:应用
2区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
3区
否
否
2021年12月升级版
工程技术3区
PHYSICS, APPLIED
物理:应用
3区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
3区
否
否
2021年12月升级版
工程技术2区
PHYSICS, APPLIED
物理:应用
2区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
3区
否
否
2020年12月升级版
工程技术2区
PHYSICS, APPLIED
物理:应用
2区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
2区
是
否
JCR分区
WOS分区等级:Q2区
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WOS期刊SCI分区
(2022-2023年最新版)
PHYSICS, APPLIED
Q2
ENGINEERING, ELECTRICAL & ELECTRONIC
Q2
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期刊介绍
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
IEEE Transactions on Electron Devices出版有关电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性的原创性和重要贡献,涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件以及在生物电子学、生物医学电子学、计算、通信、显示器微机电、成像、微致动器、纳米电子、光电子、光伏、功率IC和微传感器。还出版了关于这些主题的辅导和评论论文,偶尔还出版专刊,以更深入和更广泛的方式介绍一些特定领域的论文。
Evaluation of Low-Temperature Saturation Velocity in $\\beta$ -(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 Modulation-Doped Field-Effect Transistors
来源期刊:IEEE Transactions on Electron Devices
DOI:10.1109/TED.2018.2889573
Resistive RAM With Multiple Bits Per Cell: Array-Level Demonstration of 3 Bits Per Cell
来源期刊:IEEE Transactions on Electron Devices
DOI:10.1109/TED.2018.2879788
Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
来源期刊:IEEE Transactions on Electron Devices
DOI:10.1109/TED.2018.2887270
Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs
来源期刊:IEEE Transactions on Electron Devices
DOI:10.1109/TED.2018.2878787
Convolutional Neural Networks Based on RRAM Devices for Image Recognition and Online Learning Tasks
来源期刊:IEEE Transactions on Electron Devices
DOI:10.1109/TED.2018.2882779
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鹿粉105631
2022-11-08 15:30:45
2022-09-25 submitted
2022-09-29 under review
鹿粉112318
2022-11-08 15:30:45
05-aug-2022 submitted
01-sep-2022 major revision /reject and resubmit
07-sep-2022 a resubmission has been submitted
28-sep-2022 accept as is
鹿粉144695
2022-11-08 15:30:45
2022-06-06 submitted
2022-07-16 accept conditionally with mandatory revisions
2022-08- 05 a revision has been resubmitted
2022-08-19 accept with minor revisions
2022-08-20 a revision has been resubmitted
2022-08-21 accept as is
鹿粉186523
2022-11-08 15:30:45
2022-04-29 submitted
2022-05-01 under review
2022-05-30 awaiting ed priliminary decision
2022-06-06 awaiting decision approval
2022-06-07 accept conditionally with mandatory revisions
2022-06-26 submitted/under review
2022-07-07 awaiting ed preliminary decision
2022-07-13 awaiting decision approval
2022-07-14 accept conditionally with mandatory revisions
2022-07-17 submitted/under review
2022-07-20 awaiting decision approval
2022-07-21 accept as is